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Processor Development

Project Overview

Project Overview

This project involved the implementation of a highly complex, multi-hierarchical SoC on TSMC 40G technology, featuring a large die size, significant transistor density, multiple power islands, and intricate clocking architecture. The design demanded precise floor planning, power optimization, advanced clock-tree engineering, and flip-chip packaging support—making it one of the most challenging integration tasks in the program.

Key Achievements

Key Silicon Specifications

  • Die Area: ~86 mm² (post-shrink)

  • Total Instances: 20M+ standard-cell and macro instances

  • Transistor Count: Over 500 million

  • On-chip Memory: 20 MB+ SRAM

  • Metal Stack: 11 metal layers (5×2×2 stack-up + RDL)

  • Process Technology: TSMC 40G, supporting 0.9V and 1.8V operations


Package & Bump Architecture

  • Flip-Chip Die Support: 150 µm bump pitch

  • BGA Configurations:

    • 0.8 mm ball pitch in 23×23 FCBGA

    • 0.5 mm pitch in 14×14 POP (Package-on-Package)

  • Designed for high-reliability board attach and multi-stack packaging environments.


Multi-Hierarchical SoC Integration

1. Power & Voltage Architecture

  • 28 independent power islands, enabling fine-grained power gating and dynamic power management.

  • 3 different core supply voltages, supporting performance and leakage optimization across sub-systems.

  • Multi-Vt libraries used extensively to balance speed, leakage, and area efficiency.

2. Clocking Strategy

  • Built and optimized 100+ clock trees, addressing:

    • Multi-frequency domains

    • Scan and test clocks

    • Cross-domain timing closure

  • Ensured low skew, consistent insertion delays, and multi-corner timing robustness.

3. Advanced IO and Routing Constraints

  • 150 µm bump pitch and 30 µm IO pitch required careful pad-ring design, redistribution layer planning, and bump-to-pad alignment.

  • Ensured seamless integration with flip-chip packaging constraints.

4. Design Protections & Reliability

  • Full integration of ESD networks to meet pad-ring and IP-level protection requirements.

  • CSR (Chip System Reliability) elements embedded to meet long-term reliability and electromigration targets.


Summary of Capabilities Demonstrated

  • Successfully handled a massive SoC with half a billion transistors.

  • Delivered tight integration across multiple voltage domains and power islands.

  • Achieved reliable clock distribution with 100+ optimized trees.

  • Enabled advanced flip-chip packaging with fine-pitch bumps and dense IO requirements.

  • Ensured design robustness through full inclusion of ESD and reliability features.